IPB031NE7N3G

Infineon Technologies

Product No:

IPB031NE7N3G

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Batch:

-

Datasheet:

-

Description:

IPB031NE7 - 12V-300V N-CHANNEL P

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 155µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 3.1mOhm @ 100A, 10V
Power Dissipation (Max) 214W (Tc)
Supplier Device Package PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V
Drain to Source Voltage (Vdss) 75 V
Input Capacitance (Ciss) (Max) @ Vds 8130 pF @ 37.5 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)