GA10JT12-247

GeneSiC Semiconductor

Product No:

GA10JT12-247

Manufacturer:

GeneSiC Semiconductor

Package:

TO-247AB

Batch:

-

Datasheet:

Description:

TRANS SJT 1200V 10A TO247AB

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr GeneSiC Semiconductor
Series -
Package Tube
FET Type -
Vgs (Max) -
Technology SiC (Silicon Carbide Junction Transistor)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Obsolete
Vgs(th) (Max) @ Id -
Operating Temperature 175°C (TJ)
Rds On (Max) @ Id, Vgs 140mOhm @ 10A
Power Dissipation (Max) 170W (Tc)
Supplier Device Package TO-247AB
Drain to Source Voltage (Vdss) 1200 V
Drive Voltage (Max Rds On, Min Rds On) -
Current - Continuous Drain (Id) @ 25°C 10A (Tc)